产品展示

OP232

型号:

产品时间:2020-08-19

产品资料:

简要描述:

Each OP232 device in this series is a gallium aluminum arsenide (GaAIAs) infrared emiƫng diode, mounted in a hermeƟc metal TO‐46 housing.

详细介绍

OP232

The gallium aluminum arsenide feature provides a higher radiated output than gallium arsenide at the same forward current. Each OP231, OP232, OP233, OP234 and OP235 device is lensed to provide a narrow beam angle (18°) between half power points. The 890 nm wavelength closely matches the spectral response of silicon phototransistors, while the narrow beam angle – combined with the specified radiant intensity of the OP231 series – facilitates easy design in beam interrupt applicaƟons in conjuncƟon with the OP800 or OP598 series photosensors. The OP231 series is mechanically and spectrally matched to OP800, OP593 and OP598 phototransistors.

 


产品咨询

留言框

  • 产品:

  • 您的单位:

  • 您的姓名:

  • 联系电话:

  • 常用邮箱:

  • 省份:

  • 详细地址:

  • 补充说明:

  • 验证码:

    请输入计算结果(填写阿拉伯数字),如:三加四=7

上一篇:OP233W

下一篇:MS5611-01BA03

版权所有 © 2019 上海蒸鑫电子科技有限公司 沪ICP备14039699号-1 技术支持:化工仪器网 管理登陆 GoogleSitemap

在线客服 联系方式 二维码

服务热线

86-021-64576299

扫一扫,关注我们