Description:
Each OP123 and OP124 device is a 935 nanometer (nm) high intensity gallium arsenide infrared eming diode (GaAs),
mounted in a miniature hermecally sealed “pill" package with an enhanced temperature range and a high power output.
These devices are designed for direct mounng to PCBoards.
Each OP223 and OP224 device is an 890 nm gallium aluminum arsenide infrared eming diode (GaAIAs), mounted in a
hermecally sealed “pill" package with an enhanced temperature range and a narrow irradiance paern that provides high
on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at
equivalent drive currents and have a wavelength that is matched to silicon’s peak response. Their small package size
permits high device density mounng.
All these LEDs are mechanically and spectrally matched to the OP300 series, OP600 series and OP640 series devices.
Applications:
• Non-contact reflective object sensor
• Assembly line automation
• Mach